By Norlida Kamarulzaman, Wong Tin Wui, Sabirin Mohamed, Roshidah Rusdi, Nor Fadilah Chayed
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Additional info for Advancement of Materials and Nanotechnology II: Selected, Peer Reviewed Papers from the International Conference on the Advancement of Materials and ... 29 - Dec
Lee, J. Yu, C. J. Won, J. H. Jung, N. Hur and T. W. Noh: J. Physics: Cond. Matter 22 (2010), p. 345602  J. Koshy, J. Kurian, K. S. Kumar, P. K. Sajith, M. J. Asha and R. Jose: Ind. J. Pure and Appl. Phys. Vol. 34 (1996), p. 698  R. Jose, J. James, A. M. John, D. Sundararaman, R. Divakar and J. Koshy: Nanostruct. Mater. Vol. 11 (1999), p. 623  V. R. Kumar, P. R. S. Wariar and J. Koshy: Cryst. Res. Technol. Vol. 45 (2010), p. 619  R. Jose, A. M. John, J. K. Thomas, J. James, J. Koshy, R.
The Nb2O5 based solar cloths showed high open circuit voltage (670 mV) compared with that of the TiO2 based cells (300 mV). One of the factors to be improved for better photovoltaic parameters is to reduce the Norlida Kamarulzaman 25 percolation threshold thereby providing better connectivity with the nanowires. This could be achieved through using long-length (4–10 µm) and lower diameter (≤ 50 nm) nanowires in the holeconducting polymeric matrix. Other possible ways to improve the efficiency should be to use highly conducting polymers for hole/electron transport.
17]. 2 0 20 40 60 80 100 Pressure (kbar) Fig. 1. Calculated values of Eg (Γ-Γ), (Γ-X) and (Γ-L) gaps for Si plotted as a function of pressure. The band gaps between the top valence energy level at Γ and lower conduction energy level at X are computed on the basis of the FP-LAPW. The quantum dot potential by means of our recent model  has evluated, according to the formula P QD = b −3 . λ a (1) b is constant (in eV-1) [see table 4 in Ref. 10] and λ is a parameter appropriate for group-IV a (λ = 6), III-V (λ = 4) and II-VI (λ = 2) semiconductors (in V).